S4. Plasma Science & Etching Technology
Thursday, February 12 | 1:00 pm - 5:45 pm
#307
Next Generation Plasma Etching Tech. for the AI Era
- Date: Feb 12(Thu), 2026
- Time: 13:00-17:45
- Room: 307, Conference Room (South), 3F, COEX
- Language: English (Simultaneous interpretation will NOT be provided.)
- Registration Fee (KRW)
- Early Bird: SEMI Members 198,000 / Non-members 275,000/ Student 132,000
- Onsite: 330,000
Committee
- Daeyoun Kim (ASM)
- Jaeyoung Kim (DB HiTek)
- Arthur Park (Lam Research)
- Jong Chul Park (Samsung Electronics)
- Jong Won Shon (NEXUSBE)
- Geun Young Yeom (Sungkyunkwan University)
- Haejung Lee (Tokyo Electron Korea)
- Daehyun Jang (Applied Materials Korea)
- SP Chung (SEMES)
- Yeonghun Han (SK hynix)
Agenda
Transformational Plasma Etch Technologies Enabling Ultra Fine Pitch Patterning
Gowri Kamarthy
Lam Research
1:00 pm - 1:25 pm
Velocity and Precision Advancing Plasma Etching for AI-Driven Scaling
Sang-Jun Choi
Applied Materials
1:25 pm - 1:50 pm
Enabling 3D-IC and Advanced Packaging through Plasma Dry Etch Technologies
Jeongsoo Kim (Invited)
imec
1:50 pm - 2:30 pm
Next-Generation Etch Chemistry for the AI Era: Performance & Sustainability Enabled by Merck’s End-to-End Innovation
Sung-Ho Kim
Merck
2:50 pm - 3:15 pm
Environmentally Sustainable Plasma Etching of SiO2 using Fluorinated Ethers with Low Global Warming Potentials
Prof. Chang-Koo Kim (invited)
Ajou University
3:15 pm - 3:45 pm
Integrative HARC Etching to Overcome Scaling Limits and Beyond
Sang Wook Park
SK hynix
3:45 pm - 4:10 pm
VNAND HARC Etching’s Yesterday, Today, and Tomorrow
Hoki Lee
Samsung Electronics
4:30 pm - 4:55 pm
Non-Sinusoidal-Waveform for High Aspect Ratio Etching
Dong-Hun Kim
SEMES
4:55 pm - 5:20 pm
3D Nanopatterning Using Ion Beam Etching
Denis Joschko
scia Systems GmbH
5:20 pm - 5:45 pm
*The agenda is subject to change.