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S4. Plasma Science & Etching Technology

Thursday, February 12 | 1:00 pm - 5:45 pm
#307

Next Generation Plasma Etching Tech. for the AI Era

 

  • Date: Feb 12(Thu), 2026
  • Time: 13:00-17:45
  • Room: 307, Conference Room (South), 3F, COEX
  • Language: English (Simultaneous interpretation will NOT be provided.)
  • Registration Fee (KRW)
    • Early Bird: SEMI Members 198,000 / Non-members 275,000/ Student 132,000
    • Onsite: 330,000

 

Committee

  • Daeyoun Kim (ASM)
  • Jaeyoung Kim (DB HiTek)
  • Arthur Park (Lam Research)
  • Jong Chul Park (Samsung Electronics)
  • Jong Won Shon (NEXUSBE)
  • Geun Young Yeom (Sungkyunkwan University)
  • Haejung Lee (Tokyo Electron Korea)
  • Daehyun Jang (Applied Materials Korea)
  • SP Chung (SEMES)
  • Yeonghun Han (SK hynix) 

Agenda

Transformational Plasma Etch Technologies Enabling Ultra Fine Pitch Patterning

Gowri Kamarthy

Lam Research
1:00 pm - 1:25 pm

Velocity and Precision Advancing Plasma Etching for AI-Driven Scaling

Sang-Jun Choi

Applied Materials
1:25 pm - 1:50 pm

Enabling 3D-IC and Advanced Packaging through Plasma Dry Etch Technologies

Jeongsoo Kim (Invited)

imec
1:50 pm - 2:30 pm

Break

2:30 pm - 2:50 pm

Next-Generation Etch Chemistry for the AI Era: Performance & Sustainability Enabled by Merck’s End-to-End Innovation

Sung-Ho Kim

Merck
2:50 pm - 3:15 pm

Environmentally Sustainable Plasma Etching of SiO2 using Fluorinated Ethers with Low Global Warming Potentials

Prof. Chang-Koo Kim (invited)

Ajou University
3:15 pm - 3:45 pm

Integrative HARC Etching to Overcome Scaling Limits and Beyond

Sang Wook Park

SK hynix
3:45 pm - 4:10 pm

Break

4:10 pm - 4:30 pm

VNAND HARC Etching’s Yesterday, Today, and Tomorrow

Hoki Lee

Samsung Electronics
4:30 pm - 4:55 pm

Non-Sinusoidal-Waveform for High Aspect Ratio Etching

Dong-Hun Kim

SEMES
4:55 pm - 5:20 pm

3D Nanopatterning Using Ion Beam Etching

Denis Joschko

scia Systems GmbH
5:20 pm - 5:45 pm

*The agenda is subject to change. 

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