Velocity and Precision Advancing Plasma Etching for AI-Driven Scaling

1:25 pm - 1:50 pm

As semiconductor technology advances to sub-10nm nodes, etching critical high-aspect-ratio features, such as Logic Gate-All-Around (GAA) source/drain regions and DRAM trenches and wordlines, presents growing challenges in precision and uniformity. Conventional bias technology approaches, including RF bias or DC pulse bias, encounter complexities in depth loading, profile control, and process efficiency.

Applied Materials introduces PVT Gen2, a breakthrough plasma and ion control technology that accelerates simultaneous deep feature excavation and precise etch-front shaping within a single recipe step. By achieving near-wafer plasma control, PVT Gen2 generates high ion density and enhanced species dissociation at the sheath and wafer interface, driving superior etch performance.

PVT Gen2 demonstrates significant improvements in depth and pattern loading, mask selectivity, and profile shaping—transitioning from V-shaped to U-shaped profiles. By integrating etch and shaping functions in real time, PVT Gen2 sets a new benchmark for next generation etch technology, supporting high-volume manufacturing for AI-driven advanced 1.4nm logic and emerging memory devices.

Featured Speakers

Sang-Jun Choi

Sr. Director / Global Product Marketing and Management , Applied Materials

Sang-Jun Choi, Ph.D. is a Product Marketing Senior Director at Applied Materials. He has earned Bachelor, Master and Ph.D. in Materials Science and Engineering at Seoul National University and University of Southern California respectively. In his tenure at Applied Materials, he has worked as Application and Account Technologist for Memory and Logic and as Product Marketing for many different Conductor and Dielectric etch products.