Compound Power Semiconductor Summit

• Date: Feb 11(Wed), 2026
• Time: 13:00-16:40
• Room: 403, Conference Room (South), 4F, COEX
• Language: English and Korean (Simultaneous interpretation will NOT be provided.)
• Registration Fee (KRW)
  • Early Bird: SEMI Members 198,000 / Non-members 275,000 / Student 132,000
  • Onsite: 330,000

Compound Power Semiconductor Summit is the premier event dedicated to exploring the latest technological advancements, industry trends, and market outlooks in Wide Band Gap (WBG) materials, specifically SiC, GaN, and Ga₂O₃. 

Key Focus: SiC Value Chain & System Integration 

This year's agenda is curated to cover the entire SiC value chain, from manufacturing (single crystal, epi-wafer, ion implantation) to high-performance power system integration (devices and modules).  

Attendees will gain deep insights into critical areas, including: 

• Market & Technology Trends: Overview of the Power Semiconductor Landscape.
• SiC Epitaxy Innovation: Reducing Surface Defects via Improved In-Situ Etching.
• Advanced Manufacturing: 8-inch SiC Epitaxial Technology in China and Ga₂O₃ Single Crystal Growth Technology for Next-Generation Power Semiconductor.
• Equipment Technology: The Latest Equipment Technologies for SiC Ion Implantation and Tunable Epi Systems (SiC, GaN HEMT)
• Performance & Evaluation: High-Power Semiconductor Evaluation Methods. 

Co-organized by