Current Status of Ga₂O₃ Single Crystal Growth Technology for Next-Generation Power Semiconductor Applications

2:30 pm - 3:00 pm

B-Ga2O3 has emerged as a promising ultra-wide bandgap semiconductor for next-generation power devices due toits large bandgap (~4.8 eV) and extremely high critical electric field (~8MV/cm), enabling lower conduction loss than conventional Si, SiC, and GaN technologies. These advantages make B-Ga2O3 particularly attractive for high-voltage and harsh-environment applications, including aerospace and defense systems.

This presentation introduces the current status of B-Ga2O3 single crystal growth technologies with a focus on Edge-Defined Film-Fed Growth (EFG) and Vertical Bridgman (VB) methods. EFG enables rapid growth and mass productionof slab-type crystals, while VB growth provides improved crystal quality and cylindrical ingots suitable for powerdevice substrates. Recent progress includes stable growth of 2-4 inch B-Ga2O3 crystals using EFG, successfuldemonstration of 4-inch VB ingots, and ongoing development of 6-inch class VB crystal growth through optimized hot-zone design, atmosphere control, and crucible engineering.

Electrical and structural characterization results demonstrate high

resistivity and low crystalline defect levels, confirming the suitability of these substrates for power semiconductordevices. Orientation-dependent properties and their implications for Schottky barrier diodes and MOSFET applications are also discussed. This work highlights recent collaborative research efforts aimed at establishing adomestic supply chain and accelerating the commercialization of B-Ga2O3-based power semiconductor technologies.

Featured Speakers

Jinki Kang

CEO, AXEL

Dr. Jinki Kang is the Chief Executive Officer of AXEL Co., Ltd., where he leads the development and commercialization of single crystal materials and crystal growth equipment for power semiconductor applications. He has over 30 years of experience in single crystal growth, wafer processing, and industrial-scale manufacturing technologies.

At AXEL, Dr. Kang has been responsible for the development of single crystals and crystal growth systems used in power semiconductor devices, including materials such as SiC and β-Ga₂O₃. His work focuses on Edge-Defined Film-Fed Growth (EFG) and Vertical Bridgman (VB) technologies, with ongoing efforts to scale crystal growth to large-diameter substrates suitable for high-voltage power device applications.

Prior to AXEL, Dr. Kang held key technical and executive positions at Samsung Advanced Institute of Technology, Samsung Electro-Mechanics, Iljin Diamond, and Hansol Technics, where he led the development and mass production of GaAs, LiTaO₃/LiNbO₃, sapphire, and LED-related single crystal materials. At AXEL, he has also expanded crystal growth technologies to include YAG single crystals for solid-state laser applications.