SiC Ion Implantation Technology

3:40 pm - 4:10 pm

SiC high-temperature implanter equipment is designed to perform ion implantation on SiC wafers at elevated temperatures of around 500°C. The system incorporates specialized mechanical components that enable stable wafer handling and precise implantation under these high-temperature conditions.  

This technology is a critical enabler for producing MOSFET modules used in the electric vehicle (EV) market, where high-temperature implantation significantly enhances device performance and reliability. It is also essential for next-generation semiconductor development, supporting a wide range of applications such as advanced AI hardware, power inverters, the space industry, and environmentally friendly power generation systems. 

Featured Speakers

Wonju Jeong

Won-ju Jeong

Vice President, Nissin Ion Korea

Wonju Jeong Joined Nissin Ion Korea in 2002 and assumed the position of Vice President in 2023. Nissin Ion Korea is the Korean subsidiary of Japan’s Nissin Ion Equipment, a global leader in ion implantation technology.  

He Has accumulated 34 years of experience in the semiconductor industry, focusing primarily on ion implanter equipment. His career includes extensive expertise in equipment operation, process optimization, high-energy and high-dose implantation technologies, and production-line support. He also played key roles in technology transfer projects between Korea and Japan, led equipment performance improvement initiatives, and contributed to the development of implantation processes used in advanced semiconductor manufacturing.