Performance of Tunable Epi System (for SiC, GaN HEMT)
As the structural requirements of power and RF devices become increasingly demanding, achieving uniformity in epitaxial-layer thickness, doping, and composition has become essential for ensuring device performance and manufacturing yield.
In SiC power devices, the epitaxial drift layer defines blocking voltage and dominates on-resistance, making the control of thickness and doping uniformity critical for reliable and cost-efficient high-voltage device production.
In RF GaN HEMTs, the uniformity of the AlN buffer, GaN channel, and AlGaN barrier shapes 2DEG density and electron mobility, while lattice mismatch makes both high-quality AlN formation and the creation of abrupt GaN/AlGaN interfaces crucial for stable RF performance. As AlN buffer usage expands for high-frequency and high-power applications, both high-quality AlN growth and abrupt interface formation rely on fast gas switching capable of rapidly alternating precursors and gases during pulse-type processes.
TES Tunable Epi System-TRION (SiC) & HESTIA(GaN/AlN), built on a TES-designed horizontal reactor and a Triple Pair Nozzle, provides independently controlled lateral and vertical flow paths that enable precise regulation of precursor and reactant-gas distribution. This architectural design inherently supports the fast gas switching required for high-quality AlN and abrupt interface formation. As a result, This Tunable Epi System-TRION (SiC) & HESTIA(GaN/AlN) improves thickness and doping uniformity in SiC drift layers and enables high-quality AlN buffer growth along with uniform GaN and AlGaN epitaxy in RF GaN HEMTs. This presentation discusses the control mechanisms of the Tunable Epi System and its implications for uniformity-driven epitaxial growth and equipment design.
