Yoohyun Noh

“Yoohyun Noh” joined SK hynix in 2007 and has been engaged in the development of advanced NAND Flash memory technologies for nearly two decades. He has contributed to major innovations in high-layer 3D NAND, including 4D NAND architecture, and process optimization for charge-trap flash devices. 

He currently serves as a team leader specializing in 3D NAND process integration and next-generation memory development.