Soo Gil Kim

Soo Gil Kim, Ph.D. has worked at SK hynix since 2008 with cell technology development for phase change memory, process and device technologies for ReRAM & STT-MRAM for high density memory application. Currently he has responsibilities on development of edge technologies in Analog compute-in memory for converged memory and process unit with low power & high performance operation, and RnD as well as fundamental study for realization of high-density spintronics memory technologies.  

Prior to joining SK hynix, Kim was Post-doctor for University of Pennsylvania. During his 3 and half years at the university, Kim spent time doing comprehensive study on various materials for ReRAM application. Especially the first observation and physical understanding on purely electronic switching in oxide-based ReRAM materials was published at Nature Nanotechnology, 2011.  

He also spent 2 years doing technology development of materials and process for bulk acoustic wave resonator of high-frequency mobile communication devices as a research professor in Kyungwon University, Seongnam, Korea from 2002 to 2004.  

Kim received master and Ph.D degrees in materials science & engineering from Seoul National University, Seoul, Korea, 1997 and 2002, respectively and bachelor degree in materials science & engineering from Kyonggi University, Suwon, Korea, 1995.