High-NA EUV Lithography at the Turning Point: Preparing for Industry Insertion

오후 1:00 - 오후 1:40

Extreme ultraviolet lithography (EUVL) continues to make scaling cost effective for chip manufacturers and allows Moore`s law to pursue. EUVL entered high volume production in 2019 and the next step in this evolutionary process is the implementation of High NA EUVL with its increased Numerical Aperture (NA) of 0.55, which enables further scaling down to 8nm.

The key to unlocking the full potential of High NA EUV lithography lies in the co-optimization of various elements: the scanner, mask, resist stack, and etch. By achieving an optimal synergy between these components, we can ensure the highest performance levels for High NA EUV lithography.

Recognizing the importance of this development, Imec and ASML have joined forces to establish a specialized High NA EUV Lab which opened in 2024. This facility expedited the adoption of high NA EUV by providing to the development requirements of chip manufacturers, as well as equipment and materials suppliers.

During this presentation, we will present the logic and memory use case patterning breakthroughs obtained in the High NA Lab, at the eve of the high NA EUV adoption in the industry.

Featured Speakers

Geert Vandenberghe

VP R&D Patterning Programs, imec

Geert Vandenberghe received his MSc and PhD degree from the Katholieke Universiteit of Leuven in Belgium and is SPIE Fellow.

In 1995 he joined the Lithography Department at imec where he has been working in different roles and various areas such as resists, patterning, imaging, OPC, resolution enhancement techniques, and on various wavelengths ranging from 248nm, over 193nm and immersion to 13.5nm, all in the framework on imec’s Advanced Lithography Research Programs at imec. Currently he is Vice President Patterning Technology Programs, which is including the imec-ASML joint High NA EUV Lab.