3D Nanopatterning Using Ion Beam Etching

Nanodevice manufacturing will be faced with new challenges in future applications like quantum computing and/or integrated electro-optical devices, such as: 

• Processing and patterning of materials that are not used in standard microelectronics applications so far and 

• Generation of localized 3D structures. 

Ion beam etching is a versatile tool that covers the requirements for 3D nanodevice production. Based on its high kinetic energy, ion beam milling can pattern all materials without the need for a specific process chemistry. Nevertheless, reactive ion beam milling might address additional benefits. Furthermore, due to the anisotropic removal effect at simultaneously low divergence, ion beam technologies can be applied to generate 3-dimensional nanostructures. The poster covers exemplary specific applications of ion beam technologies in nanodevice manufacturing. 

1.) Ion beam patterning of multilayer-based devices: Standard etching technologies may not be suitable for magnetic, magneto-resistive, or piezoelectric materials. Ion beam milling is the preferred technology for patterning multilayers. Besides accessing any arbitrary material with this technology, an additional advantage is gained from the directed ion flux; e.g., sidewall redeposition can be avoided.  

2.) Generation of 3D structures in micro-optical devices: Sidewall angles of optical devices often need to be adjusted to a defined slope. Even more difficult 3D structures are applied in micro-optical devices, such as diffraction structures or coupling grids. Because of the directional removal of an ion beam, the exact angular orientations of structures can be easily adjusted. For example, a localized ion beam process will be applied to produce slanted grating structures used as coupling grids in data projection.