Advanced Interconnects Enabling 2.5D and 3D Packaging
The advancement of 2.5D and 3D packaging technologies is driving the need for high-performance interconnect solutions that support increased integration density and improved thermal and electrical performance. This presentation outlines key innovations in interconnect development that enable next-generation heterogeneous integration.
We highlight a microbump extension strategy incorporating novel barrier materials designed to enhance reliability and mitigate diffusion-related failures at finer pitches. Multirole Cu is introduced to enable new interconnect designs, while novel SnAg solder is engineered to address multi-critical dimension (multi-CD) bumping challenges and achieve exceptional coplanarity across varying bump geometries. Additionally, we present low-temperature hybrid bonding techniques for chip-to-wafer (C2W) and wafer-to-wafer (W2W) applications, enabled by Cu microstructure tuning to support bonding at lower thermal budgets while maintaining surface planarity and bond integrity.
These technologies collectively form a scalable interconnect platform that meets the demands of high-performance computing, AI, and advanced memory packaging.