Atomic Layer Deposition Processes for Future Extremely Scaled Semiconductor Devices

오후 3:35 - 오후 4:15

The U.S. Department of Energy (DOE) National Laboratories are advancing microelectronics through coordinated programs and world-leading user facilities that bridge fundamental science and technological innovation. In this talk, I will first provide an overview of DOE’s microelectronics research initiatives and then focus on major activities at Brookhaven National Laboratory (BNL), where we are developing next-generation extreme ultraviolet (EUV) photoresists and studying atomic layer deposition (ALD) processes for interconnect and dielectric materials in future, extremely scaled semiconductor devices. These research programs leverage BNL’s unique suite of DOE user facilities, including the Center for Functional Nanomaterials (CFN)—one of five DOE Nanoscale Science Research Centers (NSRCs)—which has deep expertise in ALD-based hybrid material synthesis and its application to EUV lithography, and the National Synchrotron Light Source II (NSLS-II), which provides frontier capabilities for structural and chemical characterization. I will highlight our recent progress in vapor-phase synthesis of novel organic–inorganic hybrid EUV resists and their patterning performance, as well as studies revealing key ALD growth characteristics of ruthenium for advanced interconnects, and ALD dielectric material deposition on two-dimensional materials envisioned for future channel applications.

Featured Speakers

Chang-Yong Nam (invited)

Group Leader & Senior Scientist, Brookhaven National Laboratory

Chang-Yong Nam is Senior Scientist and the Group Leader of the Electronic Nanomaterials Group at the Center for Functional Nanomaterials (CFN) of Brookhaven National Laboratory (BNL), and an Adjunct Professor of Materials Science and Engineering at Stony Brook University and University of Texas at Dallas. He also currently serves as the Lead PI of an $8M DOE Accelerate Initiative project entitled “Angstrom Era Semiconductor Patterning Material Development Accelerator.” Before joining BNL in 2007, Nam received his Ph.D. in Materials Science and Engineering from the University of Pennsylvania (2007), M.S. in Materials Science and Engineering from KAIST (Korea Advanced Institute of Science and Technology) (2001). and B.E. in Metallurgical Engineering from Korea University (1999). Nam’s research is focused on two primary areas: (a) Development of atomic layer processing (ALP) methods, including atomic layer deposition (ALD), atomic layer etching (ALE), and derivative techniques, towards microelectronics and energy applications; (b) Materials processing and device physics in low-dimensional semiconductors and neuromorphic materials. His awards include BNL Science and Technology Award (2024), Battelle Inventor of the Year (2022), Winner of DOE National Labs Accelerator Pitch Event (2021), BNL Spotlight Awards (2022, 2018, 2011), and BNL Goldhaber Distinguished Fellowship (2007)