The Inflection Point has arrived: Driving Innovation towards Future of Memory Technology
We are now entering an era of technological inflection points. DRAM is preparing transformative changes in cell structure to enable sub-10nm technology, while NAND is advancing toward ultra-high stacking with bonding technologies.
The industry has proactively anticipated increasing levels of technical difficulty and has continued to overcome them through innovations in structure and materials. However, the upcoming new era – including structure changes, material transitions, and component-level shifts – are predicted to present challenges far beyond what we have previously experienced. Addressing these hurdles will require not only differentiated technology innovations, but also fundamental changes in how we work and collaborate across the semiconductor ecosystem.
In this presentation, we will discuss the mid-to-long term innovation directions for memory technologies in response to this coming new era, and explore future collaboration opportunities.
