From Dimensions to Properties: Novel Approaching of E-Beam Technology
As semiconductor devices continue to evolve toward three-dimensional architectures, heterogeneous materials, and advanced node integration, conventional electron beam (EB) metrology focused primarily on geometrical dimensions is no longer sufficient. Emerging technologies such as EUV lithography, CFET, 2D materials, and advanced gate stacks demand inline, non-destructive techniques capable of probing surface, material, and electrical properties that are often invisible to conventional SEM.
This presentation introduces novel EB-based inspection and metrology technologies enabled by electron–photon fusion, including mirror electron microscopy, photoemission electron microscopy (PEEM), and laser-assisted SEM. These methods combine electrons and photons to access surface potential, electronic states, chemical contrast, and dynamic electrical responses while maintaininghigh spatial resolution and high throughput.
Mirror electron microscopy, based on projection-type imaging, demonstrates exceptional sensitivity to minute surface potential distortions, enabling wafer-scale detection of latent scratches and crystal defects that are difficult to observe by conventional methods. PEEM provides direct access to electronic and chemical states, allowing visualization of resist latent images and in situ observation of dielectric breakdown processes. Laser-assisted SEM, utilizing modulated electron beams and optical excitation, enables quantitative evaluation of local resistance, capacitance, and film quality, including hidden contact defects and plasma-induced damage.
These emerging EB technologies extend metrology from “visible dimensions” to “invisible properties” and offer powerful solutions for next-generation semiconductor manufacturing, R&D, and failure analysis.
