In-Line 3D SEM Metrology Data for 3D Technology Inflections in Memory, Adv. Packaging and Logic Fabs

The semiconductor industry scaling to smaller nodes and complex level three-dimensional (3D) architectures in memory, advanced packaging, and logic presents increased complexity & significant challenges which require precise in-line metrology solutions to fast actionable data. Our findings show recent advancements have improved throughput for wafer-level 3D scanning-electron-microscope (SEM) metrology and analysis of buried features in the fab, reducing the time to actionable data. Virtual critical dimension metrology   can now be extracted in hours, historically a Lab technique, requiring days and the expertise of advanced users. 

The throughput benefits are realized using a wafer-dual-beam (WDB) plasma focused-ion-beam system (PFIB) integrating 3D volume reconstruction utilizing high speed milling & SEM imaging performance with AI machine learning enhanced metrology, via virtual slice extraction, into a single factory host driven automated process.  Using advances in computational parallelization, fabs now have access to advanced critical dimension (CD) metrology such as 3D SEM tomography through 3D reconstruction and virtual-slice enabled synthetic-metrology through a process of creating a series of high-resolution SEM images from repeated milling. By integrating AI machine learning, metrology throughput and feature capture rates are improved enabling enhanced statistical analysis.