Overview of Emerging Memory Technologies for Next-Generation Computing

10:30 am - 11:00 am

Emerging memories (PCM, ReRAM, STT-MRAM, FeRAM) were initially developed as potential high-capacity replacements for DRAM and NAND Flash but ultimately failed to capture a significant market share in this role. Driven by a shift in computing paradigms towards AI and memory-centric architectures, their R&D focus has now significantly diversified. 

The strategy has moved away from a one-size-fits-all approach to targeting specific, emerging application areas. This includes development for embedded systems, standalone solutions, and specialized AI hardware. Their performance is highly application-dependent, making the key differentiators not just the memory cell itself, but the associated technologies for either segmenting or integrating components. Consequently, the future developmental strategy for these technologies is no longer about outright replacement but about creating optimized, specialized solutions that meet the high-performance and low-power demands of next-generation computing, where their unique attributes provide a competitive edge. This overview examines their current status and future outlook within this evolving landscape. 

Featured Speakers

MI_Soo Gil Kim

Soo Gil Kim

Research Fellow (VP), SK hynix

Soo Gil Kim, Ph.D. has worked at SK hynix since 2008 with cell technology development for phase change memory, process and device technologies for ReRAM & STT-MRAM for high density memory application. Currently he has responsibilities on development of edge technologies in Analog compute-in memory for converged memory and process unit with low power & high performance operation, and RnD as well as fundamental study for realization of high-density spintronics memory technologies.  

Prior to joining SK hynix, Kim was Post-doctor for University of Pennsylvania. During his 3 and half years at the university, Kim spent time doing comprehensive study on various materials for ReRAM application. Especially the first observation and physical understanding on purely electronic switching in oxide-based ReRAM materials was published at Nature Nanotechnology, 2011.  

He also spent 2 years doing technology development of materials and process for bulk acoustic wave resonator of high-frequency mobile communication devices as a research professor in Kyungwon University, Seongnam, Korea from 2002 to 2004.  

Kim received master and Ph.D degrees in materials science & engineering from Seoul National University, Seoul, Korea, 1997 and 2002, respectively and bachelor degree in materials science & engineering from Kyonggi University, Suwon, Korea, 1995.