Next Generation DRAM with Oxide Semiconductor (IGZO) and Cell Structure

As conventional BCAT-based DRAM approaches its physical scaling limits, the memory industry faces a critical turning point. To overcome these barriers, a paradigm shift toward new architectures and innovative channel materials is required. 

This presentation proposes 3D vertical structures, such as VCT (Vertical Channel Transistor) and VS-CAT, as the definitive solution for future scaling. Furthermore, we highlight the necessity of adopting novel channel materials like oxide semiconductor (IGZO). Unlike silicon, IGZO is deposition-capable and exhibits extremely low leakage current, making it ideal for 3D integration and retention improvement. 

We conclude that the convergence of IGZO channel materials and 3D vertical architectures presents the most promising pathway for realizing next-generation DRAM technology.