High NA EUV for High Volume Manufacturing

4:25 pm - 4:50 pm

Extreme Ultraviolet (EUV) lithography remains pivotal in enabling cost-effective scaling for advanced semiconductor manufacturing. The transition from 0.33 NA to 0.55 NA offers substantial benefits for high-volume manufacturing (HVM), including reduced patterning cost of technology through single exposure per layer, minimized defect density via process simplification and shorter cycle times due to reduction of mask steps.

Multiple EXE:5000 and EXE:5200B systems have been successfully deployed and qualified at customer sites and ASML’s facilities. Source power and system throughput have been increased with 1um pre-pulse and wafer stocker technologies.

This presentation outlines the recent progress in platform maturity, ensuring reliable, high good-wafer-per-day productivity. We will present the roadmap for next-generation High NA EUV systems to further reduce patterning cost of technology.

Keywords: High NA EUV lithography, 0.55 NA, patterning cost reduction, high-volume manufacturing, EXE:5000, roadmap

Featured Speakers

Herman Heijmerikx

Senior Director Product Management, ASML

Herman Heijmerikx has been at ASML for 12 years. Starting as an Engineer in DUV imaging performance, and since 2016 in Product Management. In Product management he has worked with customers on the introduction of new products into their R&D and production environment. First various scanner options, YieldStar and since 2023 High NA EUV.

Before joining ASML, Heijmerikx worked in various industries as a management consultant.

Heijmerikx has as Masters Degree in Applied Physics from the University of Twente, Enschede, The Netherlands. His Major was in Solid State Physics, specializing in material science and the use of Pulsed Laser Deposition to grow complex oxide materials.