The Evolution of EUV Resists and Semiconductor Scaling: A Technical Retrospective and Future Outlook

2:25 pm - 2:50 pm

One of the keys to breaking through the limits of semiconductor scaling is the EUV resist (EUV CAR and MOR). In 2019, the insertion of EUV (Extreme Ultraviolet) lithography technology propelled semiconductor scaling into an entirely new ere. Since, EUV CAR has stood at the forefront, enabling this breakthrough. More recently, MOR has emerged as a driving force in advancing scaling even further.

For researchers long devoted to photoresist development, MOR represents a truly disruptive innovation - an audacious material that defies conventional wisdom. Until now, it had been standard practice in semiconductor processes to reduce metallic impurities in resists for fine patterning to the ppb (10⁻⁹) and below level in order to prevent yield loss. The advent of MOR shattered this long-standing taboo, igniting a wave of innovation across the resist industry.

Now, the door to the next stage of evolution is about to open.

Featured Speakers

S1_Ken Maruyama_Biography_JSR

Ken Maruyama

Head of Fine Electronic Materials Development Center, JSR Corporation

Ph.D. Ken Maruyama is Head of the Fine Electronic Materials Development Center at JSR Corporation. Since joining JSR in 2006, he has gained extensive expertise in electronic materials R&D, spearheading innovations at JSR’s Yokkaichi, Japan-based R&D Center. From 2011 to 2014, he broadened his global perspective while working in the United States.

With nearly two decades of experience in lithography materials, including pioneering EUV lithography research at Lawrence Berkeley National Laboratory, Ken has consistently driven advancements at the forefront of semiconductor technology. In his current role, which he assumed in 2024, he oversees a wide portfolio of semiconductor materials, with a particular focus on next-generation lithography solutions.

Ken is a co-inventor on more than 70 patents and continues to play a central role in shaping the future of semiconductor materials innovation