Keun Hwi Cho received the B.S. degree in Physics and M.S., and Ph.D. degrees in Electronics Engineering from Korea University, Seoul, Korea in 2001, 2003, and 2007, respectively.
He has been with Semiconductor R&D Center, Samsung Electronics Co., Ltd. in Hwaseong, Korea, since 2006, where he is currently a principal engineer. From 2011 to 2013, he stayed in ISDA (International Semiconductor Development Alliance), New York, US as a senior engineer.
His research interests include various CMOS nano devices such as FinFET and Gate-All-Around MOSFET for high performance and low power.
본 연사의 발표는 S3. Device Technology(STS) 에서 볼 수 있습니다.