02-531-7800

Korean


S2. Advanced Materials & Process Technology

Room #308, COEX Wednesday, January 31
1:00pm to 5:00pm

Language: English (Simultaneous interpretation will NOT be provided)

등록비

  SEMI 회원사 비회원사 학생
사전등록(2/1까지) 150,000 원 180,000 원 80,000 원
현장등록 180,000 원 200,000 원 100,000 원

Register

In this session, we will be able to share the most up-to-date research and development results in the field of advanced Dielectrics, Metals and Other Materials which are the key enablers of the future semiconductor devices. Many prominent authors from the academia and industries will cover various functional materials research area and semiconductor future memories not only in the view point of fundamental but also for the mass production. Especially, topics regarding material innovation for PcRAM and ReRAM will be highlighted and technical challenges for STT-MRAM mass production will be discussed. Excellent 8 presentations including 4 outstanding invited talks will be given and will cover the major technical issues and the leading edge solutions.

Committee

  • Si Bum Kim (MagnaChip Semiconductor)
  • Hyoungyoon Kim (Dongbu HiTek)
  • Jae Sung Roh (Yonsei University)
  • Kiseon Park (SK hynix)
  • Hyun Chul Sohn (Yonsei University)
  • Gill Lee (Applied Materials)
  • Marco Lee (Lam Research Korea)
  • Jong Min Lee (Eugene Technology)
  • In Gon Lim (DIT)
  • HanJin Lim (Samsung Electronics)
  • Ji Hyun Choi (Tokyo Electron Korea)

아젠다

13:00-13:20 Highly Productive Spatial ALD platform for Memory Applications
  Rajkumar Jakkaraju, Applied Materials
   
13:20-14:00 Phase Change Memory -from the Present to the Future
  Prof. Junji Tominaga, AIST (invited)
   
14:00-14:20 STT-MRAM Challenges for Applications and Mass Production 
  Sechung Oh, Samsung Electronics     
   
14:20-14:50 Atomically Thin Semiconductor, Transition Metal Dichalcogenides Growth and Its Nonlinear Optical Characteristics
  Prof. Yong Soo Kim, University of Ulsan (invited)
   
14:50-15:10 Break
   
15:10-15:30 Integration and Characterization of 4F2 2x-nm Tech 1S1R ReRAM using NbO2 Selector
  Soo Gil Kim, SK hynix
   
15:30-16:10 Towards New Applications of ALD
  Prof. Mikko Ritala, University of Helsinki (invited)
   
16:10-16:50 Ferroelectric Hafnium and Zirconium Oxide: Enablers for New Device Concepts
  Uwe Schroeder, NaMLab (invited)
   
16:50-17:10 Processing Challenges for Emerging Memory Technology
  Alex Yoon, Lam Research

*상기 일정은 사전 안내 없이 변경될 수 있습니다.

* 발표 자료는 당일 컨퍼런스 종료 후 사이트를 통해 배포됩니다 (연사가 동의하지 않는 경우는 배포되지 않음).

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