“Cheol Seong Hwang” received the M.Sc. degree in 1989 and the Ph.D. degree in 1993 in Department of inorganic materials science and engineering, both from Seoul National University-Seoul, South Korea. In 1993 he joined the Materials Science and Engineering Laboratory of National Institute of Standards and Technology, MD USA, as a postdoctoral research fellow. Then, he joined Samsung Electronics as a senior researcher from 1994, made contributions to the fields of semiconductor memory devices with researching on high-k dielectrics including (Ba,Sr)TiO3. Since 1998, he has been a professor in the department of materials science and engineering at Seoul National University. He has authored or coauthored more than 550 papers in international peer-reviewed scientific journals, which are cited ~22,500 times (H-index 71), has given 100 invited presentations at international conferences. He also holds ~ 128 international/domestic patents. He is a recipient of Alexander von Humboldt fellowship award, which made him stay in Forschungszentrum Juelich, Germany as a Humboldt fellow in 2004, the 7th presidential young scientist award of the Korean government, and AP Faculty Excellence Award, Air Products, USA. His current interests include high-k gate oxide, DRAM capacitors, new memory devices including RRAM/PRAM, ferroelectric materials and devices, negative capacitance effect, and thin film transistors. He is also working actively in the field of neuromorphic computing devices/materials. He served as the general chair of international ALD conference in June 2010, Seoul, Korea. He also authored a book entitled “Atomic Layer Deposition for semiconductor” through Springer in 2013. He is a regular member of Korean Academy of Science and Technology, and a Fellow of Royal Society of Chemistry, UK.