Asif Khan is an assistant professor of the School of Electrical and Computer Engineering at the Georgia Institute of Technology. He received his Ph.D. in electrical engineering and computer sciences from the University of California, Berkeley in 2015. His group fabricates nanoelectronic devices that leverage new physics and phenomena in emerging material systems (such as ferro-/anti-ferroelectrics, multiferroics, complex and transition metal oxides and correlated electron systems). His work led to the first experimental proof-of-concept demonstration of the negative capacitance effect. His notable awards are the Qualcomm Innovation Fellowship in 2012, the Silver prize at the 5th Taiwan Semiconductor Manufacturing Company (TSMC) Outstanding Student Research Award in 2011 and the University Gold medal from Bangladesh University of Engineering and Technology. He has authored and co-authored over 30 journal and refereed conference papers, one book chapter, and holds one US patent.
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