S4. Plasma Science and Etching Technology

Room 307, COEX Thursday, January 24
1:00pm to 6:10pm

Plasma Etch Process Technologies for Next Generation Devices
The semiconductor business is exploded in this year and the need for semiconductor chips will be more increased in the future by the explosive increase of big data, AI chips and autonomous vehicles. But there exist many limitations at the fabrication of the next generation chips and especially the plasma etching technology will confront the severe limitation. The most critical problems at the plasma etching process have been always related with etch loading, selectivity and variation at the more shrinked patterns and the problem is that there is no plasma etchers to provide the sufficient capability at the next generation. To overcome those limitations we must developed efficient vacuum system, plasma and process simulation S/W as well as high performance plasma etcher including ALE, IBE(Ion beam etch) and ultra low temperature etch. Especially the ALE, IBE and ultra low temperature etch technologies emerged as the very promising ones for replacing the conventional etchers, and those provide unique etch characteristics for the next generation devices fabrication.
We invited the specialists on the above technical areas from worldwide and we will provide the good chances to get the insight on the next generation etch technologies at this symposium. We wish that the coming symposium will contribute to the expansion of the future technologies for overcoming the limitation on the next generation devices fabrication.
  • 날짜: 2019년 1월 24일(목)
  • 시간: 13:00-18:10
  • 장소: 코엑스 3층 307호
  • 언어: 영어 (동시통역은 지원되지 않습니다.)


  • Jaesoung Kim (DB HiTek)
  • Gyoungjin Min (Lam Research Korea)
  • Jongchul Park (Samsung Electronics)
  • Jong Won Shon (ASM Genitech)
  • Geun Young Yeom (Sungkyunkwan University)
  • Minsuk Lee (SK hynix)
  • IC Jang (Lam Research Korea)



  SEMI 회원사 비회원사 학생
사전등록(1/16까지) 150,000 원 180,000 원 80,000 원
현장등록 180,000 원 200,000 원 100,000 원



    Finding Correlation between RCP and Profile in HARC Etching through Simulation
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