02-531-7800

Korean


S2. Advanced Materials & Process Technology

Room 308, COEX Wednesday, January 23
1:00pm to 6:00pm

Advanced Materials & Technologies for Emerging Devices
 
In this session, the most up-to-date research and development outputs in the field of Advanced Materials and Process Technology, which are the key enablers of the future semiconductor devices, will be shared. Many prominent authors from the academia and industries will talk various research areas of functional materials and semiconductor devices not only in the view points of the fundamental but also of the mass production. Especially, topics regarding material innovation for semiconductor fabrication will be highlighted and technical challenges for mass production will be discussed. Excellent 8 presentations including 4 outstanding invited talks will be given to cover the major technical issues and the leading-edge solutions.
 
  • 날짜: 2019년 1월 23일 (수)
  • 시간: 13:00-18:00
  • 장소: 코엑스 3층 308호
  • 언어: 영어 (동시통역은 제공되지 않습니다.)

 

Committee

  • Deok-Sin Kil (SK hynix)
  • Si-Bum Kim (MagnaChip Semiconductor)
  • Hyoung-Yoon Kim (DB HiTek)
  • Jae-Sung Roh (Jusung Engineering)
  • Ki-Seon Park (SK Materials)
  • Jin-Seong Park (Hanyang University)
  • Hyun-Chul Sohn (Yonsei University)
  • Gill Lee (Applied Materials)
  • Marco Lee (Lam Research Korea)
  • Won-Jun Lee (Sejong University)
  • In-Gon Lim (Digital Imaging Technology)
  • Han-Jin Lim (Samsung Electronics)
  • Ji-Hyun Choi (Tokyo Electron Korea)

 

등록비

  SEMI 회원사 비회원사 학생
사전등록(1/16까지) 150,000 원 180,000 원 80,000 원
현장등록 180,000 원 200,000 원 100,000 원

 

    아젠다

       
     13:00-13:40
    New Precursors for Vapor Deposition Processes
     
       
     13:40-14:00
    CVD Precursors and Associated By-Products – Ensuring Maximum Chamber Productivity
     
       
     14:00-14:30
    CVD/ALD Developments for Safety, Performance & Affordability
     
    Jean-Marc Girard, Air Liquide Advanced Materials (invited)
     
     
     14:30-14:50
    Break
       
     14:50-15:30
    Formation of Interface Dipole Layers between Two Dielectrics: Considerations on Physical Origins and Opportunities to Manipulate Its Strength
      Prof. Koji Kita, The University of Tokyo (invited)
     
     
    15:30-15:50 Graphene and 2D Layered Materials; Device Application Prospect
     
    Hyeon-Jin Shin, SAIT, Samsung Electronics
       
    15:50-16:30 Initial Characteristics of ALD Process
     
    Prof. Jiyoung Kim, University of Texas at Dallas (invited)
       
    16:30-16:50 Break
       
    16:50-17:20 Ferroelectricity in Fluorite Structure Oxides for Future Memory Devices
      Prof. Min Hyuk Park, Pusan National University (invited)
       
    17:20-17:40 Materials and Processes for Crosspoint Emerging Memory
      WanGee Kim, Applied Materials
       
    17:40-18:00 Study of Interface Dipole in Effective Work Function Modulation
      Hyungchul Kim, SK hynix
       
    *상기일정은 사전 안내 없이 변경될 수 있습니다. 
    *발표자료는 연사동의를 받은 자료에 한하여 행사 이후 이메일로 다운로드 방법을 안내드립니다.
    Sponsored by: 
    Share page with AddThis