Oh Hyun Kim, Ph.D. has been Epitaxy Project Leader position at SK Hynix for 3 years with responsibility of epitaxy process development for DRAM, NAND, and CMOS Image Sensor devices. Many of his path finding works have been filed to several patents, and currently are in the phase of development for high volume manufacturing.
Prior to joining SK Hynix, Kim was Senior Process Engineer position for Intel Corporation. During his 5 years at Intel Corporation, Kim spent time doing epitaxy process development for embedded source and drain for PMOS and NMOS transistors. Several epitaxy layers including SiGe, SiP, and Ge were developed by his path finding works and implemented in Intel’s 22nm, 14nm, and 10nm devices.
Kim received a Ph.D. degree in Film Deposition (Epitaxy, ALD, and CVD) from University of Florida, Gainesville, Florida, USA, and Bachelor degree from Seoul National University, Seoul, South Korea.


본 연사의 발표는 S2. Advanced Materials & Process Technology(STS) 에서 볼 수 있습니다.

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