Sanghun Jeon


Sanghun Jeon is currently Tenured Associate Professor in School of Electrical Engineering at Korea Advanced Institute of Science and Technology (KAIST), Korea. His main research interests include beyond CMOS device, hafnia ferroelectric device, storage class memory, electronic skin and stretchable display. After receiving his Ph.D. degree in Gwangju Institute of Science and Technology, he was with Samsung Advanced Institute of Technology (SAIT), Giheung, Korea, where he had been working on charge-trap Flash (CTF) memory. In 2005, he was a Process Integration Engineer and a Device Engineer with the Advanced Technology Development team of Samsung Electronics Corporation(SEC) , being responsible for 8-, 16-, and 32-Gb NAND-type CTF memory devices. After 3-gen. NAND flash projects at SEC, he returned to SAIT in 2009, where he worked on oxide semiconductor-based thin-film transistor for various device applications. In 2012, he was a project leader of Haptic device at SAIT. Through vast experience, he has published with leading academic journals (Nature Materials, Nature Nanotechnology, Nano Letters, Advanced Materials and so on) and many Flagship conference proeceedings (16-IEEE IEDM, VLSI Symp., SID, & IDW) in the fields of oxide photo-transistor/display, graphene, power, MOS Tr. and memory devices. He also holds 120 patents and applies 150 patents. In 2013, he moved to Korea University as a faculty member. Since 2018, he has established ANTONIS lab in School of Electrical Engineering at KAIST

Share page with AddThis