Hyeon-Jin Shin, Ph.D. is a Research Master at Samsung Advanced Institute of Technology (SAIT), Samsung Electronics. She is a leader of Graphene team in SAIT. Graphene team is conducting fundamental and applied research about graphene & 2D materials (TMD, h-BN) for electronic, opto electronic, and energy applications. Our team has focused on improving the performance of conventional Si devices using graphene/2D as a component material. Our team is also developing new device concepts such as Graphene Barristor and IR sensor beyond Si devices.
She received his B.S. degree in Chemistry from Kongju National University (2000). She received M.S. degree in Chemistry from Korea University (2002). She joined SAIT (2002) where she developed ultra-low-dielectric materials for back-end of lines based on silsesquoxane polymer. Since 2007, she has been researched nano-carbon based materials such as Carbon Nano Tube and Graphene for electronic device. During working at SAIT, she received Ph.D in Sungkyunkwan Advanced Institute of Nano Technology from Sungkyunkwan University (2010). Her thesis topic was electronic structure modulations of nano-carbon based materials by chemical doping for electronic device. She has published over 64 articles, which received over 4800 citations (h-index of 28). She also has been filled over 200 US patents.